Cracking the Code of Silicon Carbide Defects for Quantum Tech

A new study published in Applied Physics Letters explores how tiny defects in silicon carbide (SiC) - called divacancies - could shape the future of quantum technology.

Researchers Danial Shafizade, Joel Davidsson, Takeshi Ohshima, Nguyen Tien Son and Ivan Ivanov compared three different forms of SiC (3C, 4H, and 6H) and found that while 4H-SiC suffers from unstable light emission under certain conditions, 3C- and 6H-SiC remain stable across a wider energy range. This stability makes them strong candidates for quantum communication and computing applications, especially since SiC offers advantages over diamond in transmitting signals through optical fibers.However, the team also discovered that in 3C-SiC, the signal fades at higher temperatures, limiting its use at room temperature.

✨ In short: This research helps pinpoint which forms of SiC could power tomorrow’s quantum devices.

📖 Read the study here: https://www.docdroid.com/Ri7cFlc/ds-comparative-study-of-divacancies-in-3c-4h-and-6h-sic2025-apl-pdf

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