New publication in Physical Review B!
- Jul 2
- 1 min read
A new study, “Vanadium photoluminescence in 3C-SiC”, sheds fresh light on the optical properties of vanadium defects in cubic silicon carbide (3C-SiC) – a material attracting growing interest for quantum technologies. 🔬💎
Combining advanced spectroscopy, materials growth, and theoretical modelling, the researchers at LiU working on the QRC-4-ESP project investigate the photoluminescence signatures of vanadium centres and provide important insights into their electronic structure and optical transitions. The findings deepen our understanding of transition-metal defects in SiC and help assess their potential as telecom-compatible quantum emitters and spin-photon interfaces for future quantum communication and information processing technologies. 🌐📡⚛️
The work further highlights the versatility of 3C-SiC as a promising platform for scalable quantum devices, complementing the rapidly expanding family of quantum defects in silicon carbide.
📖 Physical Review B 113, 075201 (2026)“Vanadium photoluminescence in 3C-SiC”D. Shafizadeh, V. Jokubavicius, K. Murata, H. Tsuchida, P. Udvarhelyi, G. Bian, O. Lang, M. Karaman, D. H. Enriquez, M. Brehm, T. Fromherz, M. Trupke, J. Sun, R. Yakimova, I. A. Abrikosov, N. T. Son, A. Gali and I. G. Ivanov
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